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SimulationN-channel mosfet level converter won't simulate

2024-10-03 06:31:24

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I'm trying to replicate one of the most common bi-directional logic level converters:

 

 

And my Implementation looks like this:

 

 

Simulation model for BS170:

.SUBCKT BS170 1 2 3
* 1=drain  2=gate  3=source
Cgs  2 3 12.3E-12
Cgd1 2 4 27.4E-12
Cgd2 1 4 6E-12
M1 1 2 3 3 MOST1
M2 4 2 1 3 MOST2
D1 3 1 Dbody
.MODEL MOST1 NMOS(Level=3 Kp=20.78u W=9.7m L=2u Rs=20m Vto=2 Rd=1.186)
.MODEL MOST2 NMOS(VTO=-4.73 Kp=20.78u W=9.7m L=2u Rs=20m)
.MODEL Dbody D(Is=125f N=1.023 Rs=1.281 Ikf=18.01 Cjo=46.3p M=.3423
+            Vj=.4519 Bv=60 Ibv=10u Tt=161.6n)
.ENDS

 

I've tried this with every n-channel FET with an available simulation model, even with the BSS123 from the Common Library, but every time I add any of these components to the circuit, the simulation gets stuck in processing and finally returns a gateway timeout error.

Removing the component from the circuit runs the simulation succesfully.

 

My transient simulation parameters are:

.tran 0 1m 0 1u

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