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1.Easy to use and quick to get started
2.The process supports design scales of 300 devices or 1000 pads
3.Supports simple circuit simulation
4.For students, teachers, creators
1.Brand new interactions and interfaces
2.Smooth support for design sizes of over 5,000 devices or 10,000 pads
3.More rigorous design constraints, more standardized processes
4.For enterprises, more professional users
STD C128DCR 256K SRAM replacement
License: CERN Open Hardware License
Mode: Editors' pick
Cloned from C128DCR 256K SRAM
Replaces all of onboard C128DCR DRAM memory by 256K SRAM.
Provides /RAMCAS2 and /RAMCAS3 inputs for 256K expansion (MMU expansion by M. Makela) or something akin to +60/+256K for C64 mode.
ID | Name | Designator | Footprint | Quantity | BOM_Manufacturer | BOM_Manufacturer Part |
---|---|---|---|---|---|---|
1 | 100nF | C1,C2,C3,C4 | C0805 | 4 | TORCH | CT41G-0805-2X1-50V-0.1μF-M(N) |
2 | Header-Male-2.54_1x2 | H1 | HDR-TH_2P-P2.54-V-M-1 | 1 | TE Connectivity | 826629-2 |
3 | 10kΩ | R1,R2 | R0603 | 2 | Tyohm | RMC060310K1%N |
4 | AS6C2008A-55SINTR | U1 | SOP-32_L20.7-W11.3-P1.27-LS14.1-BL | 1 | Alliance Memory | AS6C2008A-55SINTR |
5 | SN74HCT573PWR | U2 | TSSOP-20_L6.5-W4.4-P0.65-LS6.4-BL | 1 | TI | SN74HCT573PWR |
6 | 74HCT32D,653 | U3 | SOIC-14_L8.7-W3.9-P1.27-LS6.0-BL | 1 | Nexperia | 74HCT32D,653 |
7 | SN74HC148DR | U4 | SOIC-16_L9.9-W3.9-P1.27-LS6.0-BL | 1 | TI | SN74HC148DR |
8 | TMS4464 (D0-D3, bank0) | U38 | DIP18-2.54-22.8X7.62MM | 1 | Texas | TMS4464 |
9 | TMS4464 (D4-D7, bank1) | U41 | DIP18-2.54-22.8X7.62MM | 1 | Texas | TMS4464 |
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