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Brand new interactions and interfaces
Smooth support for design sizes of over 3W
devices or 10W pads
More rigorous design constraints, more
standardized processes
For enterprises, more professional users
Easy to use and quick to get started
The process supports design scales of 300
devices or 1000 pads
Supports simple circuit simulation
For students, teachers, creators
STD C128DCR 256K SRAM replacement
Replaces all of onboard C128DCR DRAM memory by 256K SRAM.
Provides /RAMCAS2 and /RAMCAS3 inputs for 256K expansion (MMU expansion by M. Makela) or something akin to +60/+256K for C64 mode.
ID | Name | Designator | Footprint | Quantity | BOM_Manufacturer | BOM_Manufacturer Part |
---|---|---|---|---|---|---|
1 | 100nF | C1,C2,C3,C4 | C0805 | 4 | TORCH | CT41G-0805-2X1-50V-0.1μF-M(N) |
2 | Header-Male-2.54_1x2 | H1 | HDR-TH_2P-P2.54-V-M-1 | 1 | TE Connectivity | 826629-2 |
3 | 10kΩ | R1,R2 | R0603 | 2 | Tyohm | RMC060310K1%N |
4 | AS6C2008A-55SINTR | U1 | SOP-32_L20.7-W11.3-P1.27-LS14.1-BL | 1 | Alliance Memory | AS6C2008A-55SINTR |
5 | SN74HCT573PWR | U2 | TSSOP-20_L6.5-W4.4-P0.65-LS6.4-BL | 1 | TI | SN74HCT573PWR |
6 | 74HCT32D,653 | U3 | SOIC-14_L8.7-W3.9-P1.27-LS6.0-BL | 1 | Nexperia | 74HCT32D,653 |
7 | SN74HC148DR | U4 | SOIC-16_L9.9-W3.9-P1.27-LS6.0-BL | 1 | TI | SN74HC148DR |
8 | TMS4464 (D0-D3, bank0) | U38 | DIP18-2.54-22.8X7.62MM | 1 | Texas | TMS4464 |
9 | TMS4464 (D4-D7, bank1) | U41 | DIP18-2.54-22.8X7.62MM | 1 | Texas | TMS4464 |
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